Design and fabrication process flow for high-efficiency and flexible InGaN solar cells

We present the design of high-efficiency and flexible InGaN solar cells based on nano-pyramid absorbers, which allows for high indium incorporation reduced polarization effects while maintaining crystalline quality. The process uses nanoscale selective area growth van der Waals epitaxy two-dimensional (2D) hexagonal boron nitride sapphire substrates. 2D layer enables mechanical release via self-lift-off its transfer to a substrate. Through coupled optical electrical simulations, we compare different designs p- n-regions propose two device architectures that combine flexibility power conversion efficiency (up 16.4%). This approach can provide solution fabrication high-efficiency, low-cost InGaN-based cells.